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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP14N60E/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E-series introduces an Energy-efficient, ESD protected, and short circuit rugged device. * * * * * * Industry Standard TO-220 Package High Speed: Eoff = 60 mJ/A typical at 125C High Voltage Short Circuit Capability - 10 ms minimum at 125C, 400 V Low On-Voltage 2.0 V typical at 10 A, 125C Robust High Voltage Termination ESD Protection Gate-Emitter Zener Diodes MGP14N60E IGBT IN TO-220 14 A @ 90C 18 A @ 25C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE C G C G E CASE 221A-06 TO-220AB E MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJA TL Value 600 600 20 18 14 28 110 0.88 - 55 to 150 10 1.1 65 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W C Designer's is a trademark of Motorola, Inc. (c) Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MGP14N60E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Emitter-to-Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 5.0 Adc) (VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 10 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Gate Charge (VCC = 360 Vdc IC = 10 Adc Vdc, Adc, VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. LE -- 7.5 -- nH (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 25 C) 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- 38 40 120 204 0.35 32 30 208 212 0.6 57 12 25 -- -- -- -- -- -- -- -- -- -- -- -- -- mJ nC mJ ns ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 1020 104 17 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 5.0 8.0 -- -- 1.6 1.5 2.0 1.9 -- 2.4 Vdc mV/C Mhos Vdc BVCES 600 -- BVECS ICES -- -- IGES -- -- -- -- 10 200 50 15 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit mAdc 2 Motorola TMOS Power MOSFET Transistor Device Data MGP14N60E 30 TJ = 25C IC , COLLECTOR CURRENT (AMPS) 17.5 V 20 V 20 15 V 12.5 V IC , COLLECTOR CURRENT (AMPS) 30 TJ = 125C 17.5 V 20 20 V VGE = 10 V 10 15 V 12.5 V VGE = 10 V 10 0 0 2.0 4.0 6.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0 0 2.0 4.0 6.0 8.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25C Figure 2. Output Characteristics, TJ = 125C VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 30 IC , COLLECTOR CURRENT (AMPS) VCE = 100 V 5 ms PULSE WIDTH 20 2.3 VGE = 15 V 80 ms PULSE WIDTH 2.1 IC = 10 A 1.9 7.5 A 1.7 5.0 A 1.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 10 TJ = 125C 25C 0 5.0 7.0 9.0 11 13 15 17 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) Figure 3. Transfer Characteristics Figure 4. Collector-To-Emitter Saturation Voltage versus Junction Temperature TJ = 25C VGE = 0 C, CAPACITANCE (pF) 1600 Cies Coes 800 Cres VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 2400 20 16 QT 12 Q1 8.0 TJ = 25C VCC = 300 V IC = 10 A Q2 4.0 0 0 20 40 0 0 5.0 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 60 80 QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-To-Emitter Voltage versus Total Charge Motorola TMOS Power MOSFET Transistor Device Data 3 MGP14N60E 0.8 TURN-OFF ENERGY LOSSES (mJ) TURN-OFF ENERGY LOSSES (mJ) TJ = 125C VDD = 360 V VGE = 15 V 0.6 IC = 7.5 A 0.4 IC = 5.0 A 0.2 5.0 15 25 35 45 RG, GATE RESISTANCE (OHMS) 0.8 VCC = 360 V VGE = 15 V RG = 20 W IC = 10 A 0.4 IC = 7.5 A IC = 10 A 0.6 0.2 IC = 5.0 A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7. Turn-Off Losses versus Gate Resistance IC , COLLECTOR-TO-EMITTER CURRENT (AMPS) Figure 8. Turn-Off Losses versus Junction Temperature 1.0 TURN-OFF ENERGY LOSSES (mJ) TJ = 125C VCC = 360 V VGE = 15 V RG = 20 W 100 0.8 0.6 10 TJ = 125C RGE = 20 W VGE = 15 V 1.0 1.0 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0.4 0.2 0 0 5.0 10 15 IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) Figure 9. Turn-Off Losses versus Collector-To-Emitter Current Figure 10. Reverse Biased Safe Operating Area 4 Motorola TMOS Power MOSFET Transistor Device Data MGP14N60E PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J GATE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 5 MGP14N60E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 6 Motorola TMOS Power MOSFET TransistorMGP14N60E/D Device Data |
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